Reentrant Layer-by-Layer Etching of GaAs(001)
نویسندگان
چکیده
منابع مشابه
Layer-by-layer etching of GaAs „110... with halogenation and pulsed-laser irradiation
We have investigated the effect of laser irradiation on the terrace morphology of Br-covered GaAs ~110!. Layer-by-layer etching of GaAs ~110! is demonstrated through laser-induced etching and atomic desorption. Nanosecond pulsed-laser irradiation ~hn52.3 eV, pulse power ;35 mJ cm! of Br–GaAs ~110! initially produces a high density of small, single-layer etch pits as Br is consumed. Continued la...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 1995
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.74.3289